MJ802 |
RFQ for MJ802 Required Field |
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| Technical/Catalog Information | MJ802 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 90V |
| Current - Collector (Ic) (Max) | 30A |
| Power - Max | 200W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 7.5A, 2V |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 750mA, 7.5A |
| Frequency - Transition | 2MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Chassis Mount |
| Package / Case | TO-204, TO-3 |
| Packaging | Tray |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MJ802 MJ802 MJ802OS ND MJ802OSND MJ802OS |
| Product | Manufacturers | Pack | D/C | ||||||||||
| MJ802 | - | CAN | 00+ |
This amplifier can drive ±90 V at 10A, more than twice the output swing of the LM12. The IC provides current and power limiting for the discrete transistors.
|
Rating |
Symbol |
Value |
Unit |
| CollectorEmitter Voltage |
VCEO |
100 |
Vdc |
| CollectorEmitter Voltage |
VCEX |
100 |
Vdc |
| CollectorEmitter Voltage |
VCEV |
90 |
Vdc |
| Emitter Base Voltage |
VEB |
4.0 |
Vdc |
| Collector Current |
IC |
30 |
Adc |
| Base Current |
IB |
7.5 |
Adc |
| Total Power Dissipation @ TC = 25 Derate above 25 |
PD |
200 1.14 |
Watts W/ |
| Operating and Storage Junction Temperature Range |
TJ,Tstg |
65 to +200 |
